Samsung 990 EVO Plus Internal SSD

AED 589.84

In stock

SAMSUNG 990 EVO Plus Internal SSD, 2TB Capacity, PCIe Gen 4.0 x4 / 5.0 x2 NVMe 2.0 Interface, Up to 7,250 MB/s Read & 6,300 MB/s Write Support, V-NAND TLC | MZ-V9S2T0BW

AED 589.84

Description

Upgrade your system performance with the Samsung 990 EVO Plus Internal SSD, designed to deliver exceptional speed, reliability, and efficiency for professionals, gamers, and content creators in Dubai and across the UAE. Featuring cutting-edge PCIe Gen 4.0 x4 / 5.0 x2 NVMe 2.0 interface, this high-performance SSD offers lightning-fast read and write speeds that redefine data transfer capabilities. With a massive 2TB capacity, it’s the perfect solution for handling intensive workloads, 4K video editing, gaming, and large-scale file management.

Blazing-Fast Performance

The Samsung 990 EVO Plus 2TB SSD is engineered for speed, offering up to 7,250 MB/s sequential read and 6,300 MB/s sequential write speeds. Whether you’re booting your system, loading heavy software, or transferring large media files, you’ll experience unmatched responsiveness. This makes it an ideal choice for gamers, professionals, and businesses seeking next-level performance across Dubai, Abu Dhabi, and the UAE.

PCIe Gen 4.0 x4 / 5.0 x2 NVMe 2.0 Interface

Built to take advantage of modern hardware, the Samsung 990 EVO Plus utilizes PCIe Gen 4.0 x4 and 5.0 x2 NVMe 2.0 technology, offering superior bandwidth and lower latency compared to traditional SSDs. This ensures seamless compatibility with the latest motherboards and laptops, delivering faster boot times, improved multitasking, and smoother workflows for both home and enterprise users.

Reliable V-NAND TLC Technology

At the heart of this SSD lies Samsung’s advanced V-NAND TLC (Triple-Level Cell) technology, ensuring consistent performance, endurance, and energy efficiency. The 990 EVO Plus not only stores your data securely but also maintains sustained performance during demanding tasks. This makes it perfect for creative professionals, engineers, and gamers who require reliable and durable storage.

Advanced Thermal Control and Power Efficiency

The Samsung 990 EVO Plus features intelligent thermal management with nickel-coated controllers and heat spreader labels that help prevent overheating during intensive workloads. It also offers improved power efficiency, consuming less energy while delivering maximum output — ideal for laptops, desktops, and compact systems operating in the UAE’s warm climate.

Easy Installation and Samsung Magician Software

Installing the 990 EVO Plus is effortless thanks to its M.2 2280 form factor. Samsung’s Magician Software enhances the user experience by providing tools for performance optimization, firmware updates, and secure data management. Whether upgrading your system or building a new rig, this SSD ensures smooth and straightforward integration.

Express Delivery

We provide express delivery across Dubai, Abu Dhabi, Al Ain, Sharjah, Ajman, Ras Al Khaimah, Fujairah, and Umm Al Quwain, UAE for the Samsung 990 EVO Plus Internal SSD, 2TB Capacity, PCIe Gen 4.0 x4 / 5.0 x2 NVMe 2.0 Interface, Up to 7,250 MB/s Read & 6,300 MB/s Write, V-NAND TLC | MZ-V9S2T0BW.

Specifications

Model Code (Capacity)MZ-V9S2T0BW (2TB)
General Features
ApplicationClient PCs
Form FactorM.2 (2280)
InterfacePCIe® Gen 4.0 x4 / 5.0 x2 NVMe™ 2.0
Dimension (WxHxD)80.15 x 22.15 x 2.38mm
WeightMax 9.0g
Storage MemorySamsung V-NAND TLC
ControllerSamsung in-house Controller
Cache MemoryHMB (Host Memory Buffer)
Special Features
TRIM SupportSupported
S.M.A.R.T SupportSupported
GC (Garbage Collection)Auto Garbage Collection Algorithm
Encryption SupportAES 256-bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted Drive)
WWN SupportNot Supported
Device Sleep Mode SupportYes
Performance
Sequential ReadUp to 7,250 MB/s
Sequential WriteUp to 6,300 MB/s
Random Read (4KB, QD32)Up to 1,000,000 IOPS
Random Write (4KB, QD32)Up to 1,350,000 IOPS
Environment
Average Power ConsumptionRead 4.6W / Write 4.2W
Power Consumption (Idle)Typical 60mW for all capacities
Power Consumption (Sleep)Typical 5mW for all capacities
Allowable Voltage3.3V ± 5%
Reliability (MTBF)1.5 Million Hours
Operating Temperature0 – 70°C
Shock Resistance1,500 G & 0.5 ms (Half sine)

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