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SAMSUNG 990 EVO Plus Internal SSD
AED 1,152.11
SAMSUNG 990 EVO Plus Internal SSD, 4TB Capacity, PCIe Gen 4.0 x4 / 5.0 x2 NVMe 2.0 Interface, Up to 7,250 MB/s Read & 6,300 MB/s Write Support, V-NAND TLC | MZ-V9S4T0BW
Description
Experience next-level performance with the SAMSUNG 990 EVO Plus Internal SSD, engineered for exceptional speed, efficiency, and reliability. Featuring a massive 4TB capacity, this SSD is ideal for professionals, gamers, and creators in Dubai and across the UAE who demand top-tier performance for heavy workloads, gaming, and multimedia creation. Equipped with the PCIe Gen 4.0 x4 / 5.0 x2 NVMe 2.0 interface and Samsung V-NAND TLC technology, the 990 EVO Plus delivers blazing-fast data transfer speeds, exceptional endurance, and smooth multitasking across all applications.
Blazing-Fast PCIe Gen4 / Gen5 Performance
Powered by the advanced PCIe Gen 4.0 x4 and Gen 5.0 x2 interface, the Samsung 990 EVO Plus 4TB offers sequential read speeds up to 7,250 MB/s and write speeds up to 6,300 MB/s. This ensures near-instant boot times, rapid game loading, and ultra-fast data access for professional workloads. Whether you’re editing 8K videos, managing large datasets, or playing the latest AAA games, this SSD delivers unparalleled speed and responsiveness. For users in Dubai, Abu Dhabi, and the wider UAE, it guarantees high performance and efficiency for any demanding task.
Massive 4TB Capacity for High-Volume Storage
With a generous 4TB storage capacity, the Samsung 990 EVO Plus provides ample room for large projects, creative assets, games, and system backups. It’s ideal for professionals in media production, design, or IT who need both speed and space. The large capacity ensures you can work seamlessly with multiple applications and store high-resolution content without worrying about limited storage.
Advanced V-NAND TLC Technology
Built with Samsung’s V-NAND TLC (Triple-Level Cell) technology, this SSD ensures faster performance, improved efficiency, and enhanced durability. Combined with intelligent thermal control and Samsung’s proven reliability, the 990 EVO Plus delivers consistent performance under intensive workloads. Users across the UAE can trust it for stability and longevity in professional and creative environments.
Energy Efficient and Thermally Optimized
The Samsung 990 EVO Plus is designed to operate efficiently while maintaining optimal temperatures. With improved power efficiency up to 70% higher than the previous generation, it’s ideal for laptops, desktops, and workstations. Its intelligent thermal management system helps prevent overheating, ensuring sustained speed and reliability during long hours of heavy use — perfect for both office and studio environments in Dubai and beyond.
Perfect for Gamers, Creators, and Professionals
Whether you’re a gamer seeking lightning-fast load times, a video editor handling 4K/8K content, or a developer working with large-scale applications, the 990 EVO Plus 4TB delivers unmatched performance and reliability. Its flexibility across PCIe Gen4 and Gen5 platforms ensures future-ready compatibility and stable performance across different devices.
Express Delivery
We provide express delivery across Dubai, Abu Dhabi, Sharjah, Ajman, Al Ain, Ras Al Khaimah, Fujairah, and Umm Al Quwain, UAE for the SAMSUNG 990 EVO Plus Internal SSD, 4TB Capacity, PCIe Gen 4.0 x4 / 5.0 x2 NVMe 2.0 Interface, Up to 7,250 MB/s Read & 6,300 MB/s Write Support, V-NAND TLC | MZ-V9S4T0BW.
Specifications
Model Code (Capacity) | MZ-V9S4T0BW (4TB) |
General Features | |
Application | Client PCs |
Form Factor | M.2 (2280) |
Interface | PCIe® Gen 4.0 x4 / 5.0 x2 NVMe™ 2.0 |
Dimension (WxHxD) | 80.15 x 22.15 x 2.38mm |
Weight | Max 9.0g |
Storage Memory | Samsung V-NAND TLC |
Controller | Samsung in-house Controller |
Cache Memory | HMB (Host Memory Buffer) |
Special Features | |
TRIM Support | Supported |
S.M.A.R.T Support | Supported |
GC (Garbage Collection) | Auto Garbage Collection Algorithm |
Encryption Support | AES 256-bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted Drive) |
WWN Support | Not Supported |
Device Sleep Mode Support | Yes |
Performance | |
Sequential Read | Up to 7,250 MB/s |
Sequential Write | Up to 6,300 MB/s |
Random Read (4KB, QD32) | Up to 1,050,000 IOPS |
Random Write (4KB, QD32) | Up to 1,400,000 IOPS |
Environment | |
Average Power Consumption | Read 5.5W / Write 4.8W |
Power Consumption (Idle) | Typical 60mW for all capacities |
Power Consumption (Sleep) | Typical 5mW for all capacities |
Allowable Voltage | 3.3V ± 5% |
Reliability (MTBF) | 1.5 Million Hours |
Operating Temperature | 0 – 70°C |
Shock Resistance | 1,500 G & 0.5 ms (Half sine) |
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